Two-dimensional simulations of multi-hollow VHF SiH4/H2 plasma

• Main Authors: Li-Wen Su, Weiting Chen, Kiichiro Uchino, Yoshinobu Kawai
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2018-02-01
• Series: AIP Advances
• Online Access: http://dx.doi.org/10.1063/1.5003911

A triode multi-hollow VHF SiH4/H2 plasma (60 MHz) was examined at a pressure of 20 Pa by two-dimensional simulations using the fluid model. In this study, we considered the effect of the rate constant of reaction, SiH3 + SiH3→SiH2 + SiH4, on the plasma characteristics. A typical VHF plasma of a high-electron density with a low-electron temperature was obtained between two discharge electrodes. Spatial profiles of SiH3+, SiH2+, SiH3- and SiH3 densities were similar to that of the electron density while the electron temperature had a maximum value near the two discharge electrodes. It was found that the SiH3 radical density did not decrease rapidly near the substrate and the electron temperature was lower than 1 eV, suggesting that the triode multi-hollow plasma source can provide high quality amorphous silicon with a high deposition rate.