Influence of Ga-doping on the thermoelectric properties of Bi(2−x)GaxTe2.7Se0.3 alloy
Bi(2−x)GaxTe2.7Se0.3 (x=0, 0.04, 0.08, 0.12) alloys were fabricated by vacuum melting and hot pressing technique. The structure of the samples was evaluated by means of X-ray diffraction. The peak shift toward higher angle can be observed by Ga-doping. The effects of Ga substitution for Bi on the el...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2015-02-01
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| Series: | Progress in Natural Science: Materials International |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S1002007115000040 |