Influence of Ga-doping on the thermoelectric properties of Bi(2−x)GaxTe2.7Se0.3 alloy
Bi(2−x)GaxTe2.7Se0.3 (x=0, 0.04, 0.08, 0.12) alloys were fabricated by vacuum melting and hot pressing technique. The structure of the samples was evaluated by means of X-ray diffraction. The peak shift toward higher angle can be observed by Ga-doping. The effects of Ga substitution for Bi on the el...
Main Authors: | Xingkai Duan, Konggang Hu, Shifeng Ding, Dahu Man, Haixia Jin |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2015-02-01
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Series: | Progress in Natural Science: Materials International |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S1002007115000040 |
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