Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application
The Ce and Mn co-doped BiFeO3 (BCFMO) thin films were synthesized on Pt/Ti/SiO2/Si substrates using a sol-gel method. The unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/ruptur...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4860950 |