Sensing of DNA by graphene-on-silicon FET structures at DC and 101 GHz
A graphene–silicon field-effect transistor (GFET) structure is demonstrated as a detector of single-stranded 13-mer DNA simultaneously at DC and 101 GHz at three different molarities: 0.01, 1.0 and 100 nM. The mechanism for detection at DC is the DNA-induced change in lateral sheet conductance, wher...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2015-09-01
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| Series: | Sensing and Bio-Sensing Research |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2214180415000367 |