Phosphorus diffusion with the help of the solid planar source in the manufacturing of the integrated circuits
The results of the development and realization of the basic process of the phosphorus diffusion for the formation of the active region of the power silicon transistor have been considered. It is shown that the obtained optimum technological conditions of the phosphorus diffusion using solid planar s...
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| Format: | Article |
| Language: | English |
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Politehperiodika
2008-02-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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| Online Access: | http://www.tkea.com.ua/tkea/2008/1_2008/pdf/12.zip |