Light‐Driven WSe2‐ZnO Junction Field‐Effect Transistors for High‐Performance Photodetection

Light‐Driven WSe2‐ZnO Junction Field‐Effect Transistors for High‐Performance Photodetection

Abstract Assembling nanomaterials into hybrid structures provides a promising and flexible route to reach ultrahigh responsivity by introducing a trap‐assisted gain (G) mechanism. However, the high‐gain photodetectors benefitting from long carrier lifetime often possess slow response time (t) due to...

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Bibliographic Details
Main Authors: Nan Guo, Lin Xiao, Fan Gong, Man Luo, Fang Wang, Yi Jia, Huicong Chang, Junku Liu, Qing Li, Yang Wu, Yang Wang, Chongxin Shan, Yang Xu, Peng Zhou, Weida Hu
Format: Article
Language:English
Published: Wiley 2020-01-01
Series:Advanced Science
Subjects:
gain
junction field‐effect transistors
photoresponse
response time
tradeoff
Online Access:https://doi.org/10.1002/advs.201901637

Internet

https://doi.org/10.1002/advs.201901637

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