A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon
Abstract In this paper, a new preparation process of nanometer black silicon is proposed, by which high trapping optical Se-doped black silicon material is prepared by nanosecond pulsed laser ablation of high-resistance silicon coated with Se film in HF gas atmosphere. The results indicate that the...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2021-02-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-021-03499-x |