I-V Characteristics of InGaP/GaAs Solar Cell with the presence of a Back Surface Field and a Tunnel junction
The high efficiency solar cells are based on semi conductor technology. A tandem solar cell is simulated using the solar simulator Tcad silvaco. In this work, we aim to model the dual junction InGaP/GaAs solar cell with a single back surface field (BSF) to extract the main influence of this layer a...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
ESRGroups
2018-06-01
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| Series: | Journal of Electrical Systems |
| Subjects: | |
| Online Access: | https://journal.esrgroups.org/jes/papers/14_2_6.pdf |