A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM

A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM

Spin transfer torque-random access memory (STT-RAM) has recently been regarded as one of the most promising non-volatile memory candidates for the next-generation computer architectures. However, the readability issue has become a new obstacle for STT-RAM in deeply-scaled technology nodes, owing to...

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Bibliographic Details
Main Authors: He Zhang, Wang Kang, Youguang Zhang, Meng-Fan Chang, Weisheng Zhao
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Access
Subjects:
Read reliability
read disturbance
sensing circuit
sensing margin
STT-RAM
Online Access:https://ieeexplore.ieee.org/document/8509589/

Internet

https://ieeexplore.ieee.org/document/8509589/

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