Reliability Investigation of GaN HEMTs for MMICs Applications

Reliability Investigation of GaN HEMTs for MMICs Applications

Results obtained during the evaluation of radio frequency (RF) reliability carried out on several devices fabricated with different epi-structure and field-plate geometries will be presented and discussed. Devices without a field-plate structure experienced a more severe degradation when compared to...

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Bibliographic Details
Main Authors: Alessandro Chini, Gaudenzio Meneghesso, Alessio Pantellini, Claudio Lanzieri, Enrico Zanoni
Format: Article
Language:English
Published: MDPI AG 2014-08-01
Series:Micromachines
Subjects:
GaN HEMT (High Electron Mobility Transistors)
reliability
RF stress
degradation mechanism
Online Access:http://www.mdpi.com/2072-666X/5/3/570

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http://www.mdpi.com/2072-666X/5/3/570

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