Study of TiAl thin films on piezoelectric CTGS substrates as an alternative metallization system for high-temperature SAW devices

Ti/Al multilayer films with a total thickness of 200 nm were deposited on the high-temperature (HT) stable piezoelectric Ca3TaGa3Si2O14 (CTGS) as well as on thermally oxidized Si (SiO2/Si) reference substrates. The Ti–Al films were characterized regarding their suitability as an alternative metalliz...

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Main Authors: Marietta Seifert, Eric Lattner, Siegfried B. Menzel, Steffen Oswald, Thomas Gemming
Format: Article
Language:English
Published: Elsevier 2021-05-01
Series:Journal of Materials Research and Technology
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785421003501
id doaj-0750b3908ae640c489f441b86b6ec1f1
record_format Article
spelling doaj-0750b3908ae640c489f441b86b6ec1f12021-05-24T04:31:06ZengElsevierJournal of Materials Research and Technology2238-78542021-05-011223832395Study of TiAl thin films on piezoelectric CTGS substrates as an alternative metallization system for high-temperature SAW devicesMarietta Seifert0Eric Lattner1Siegfried B. Menzel2Steffen Oswald3Thomas Gemming4Corresponding author.; Leibniz IFW Dresden, Helmholtzstr. 20, 01069, Dresden, GermanyLeibniz IFW Dresden, Helmholtzstr. 20, 01069, Dresden, GermanyLeibniz IFW Dresden, Helmholtzstr. 20, 01069, Dresden, GermanyLeibniz IFW Dresden, Helmholtzstr. 20, 01069, Dresden, GermanyLeibniz IFW Dresden, Helmholtzstr. 20, 01069, Dresden, GermanyTi/Al multilayer films with a total thickness of 200 nm were deposited on the high-temperature (HT) stable piezoelectric Ca3TaGa3Si2O14 (CTGS) as well as on thermally oxidized Si (SiO2/Si) reference substrates. The Ti–Al films were characterized regarding their suitability as an alternative metallization for electrodes in HT surface acoustic wave devices. These films provide the advantage of significantly lower costs and in addition also a significantly lower density as compared to Pt, which allows a greater flexibility in device design. To realize a thermal stability of the films, AlNO cover as well as barrier layers at the interface to the substrate were applied. The samples were annealed for 10 h at up to 800 °C in high vacuum (HV) and at 600 °C in air and analyzed regarding the γ-TiAl phase formation, film morphology, and possible degradation. The Ti/Al films were prepared either by magnetron sputtering or by e-beam evaporation and the different behavior arising from the different deposition method was analyzed and discussed. For the evaporated Ti/Al films, AlNO barriers with a lower O content were used to evaluate the influence of the composition of the AlNO on the HT stability. The sputter-deposited Ti/Al films showed an improved γ-TiAl phase formation and HT stability (on SiO2/Si up to 800 °C in HV and 600 °C in air, on CTGS with a slight oxidation after annealing at 800 °C in HV) as compared to the evaporated samples, which were only stable up to 600 °C in HV and in air.http://www.sciencedirect.com/science/article/pii/S2238785421003501TiAl multilayersCTGSThin filmsHigh-temperature SAW device
collection DOAJ
language English
format Article
sources DOAJ
author Marietta Seifert
Eric Lattner
Siegfried B. Menzel
Steffen Oswald
Thomas Gemming
spellingShingle Marietta Seifert
Eric Lattner
Siegfried B. Menzel
Steffen Oswald
Thomas Gemming
Study of TiAl thin films on piezoelectric CTGS substrates as an alternative metallization system for high-temperature SAW devices
Journal of Materials Research and Technology
TiAl multilayers
CTGS
Thin films
High-temperature SAW device
author_facet Marietta Seifert
Eric Lattner
Siegfried B. Menzel
Steffen Oswald
Thomas Gemming
author_sort Marietta Seifert
title Study of TiAl thin films on piezoelectric CTGS substrates as an alternative metallization system for high-temperature SAW devices
title_short Study of TiAl thin films on piezoelectric CTGS substrates as an alternative metallization system for high-temperature SAW devices
title_full Study of TiAl thin films on piezoelectric CTGS substrates as an alternative metallization system for high-temperature SAW devices
title_fullStr Study of TiAl thin films on piezoelectric CTGS substrates as an alternative metallization system for high-temperature SAW devices
title_full_unstemmed Study of TiAl thin films on piezoelectric CTGS substrates as an alternative metallization system for high-temperature SAW devices
title_sort study of tial thin films on piezoelectric ctgs substrates as an alternative metallization system for high-temperature saw devices
publisher Elsevier
series Journal of Materials Research and Technology
issn 2238-7854
publishDate 2021-05-01
description Ti/Al multilayer films with a total thickness of 200 nm were deposited on the high-temperature (HT) stable piezoelectric Ca3TaGa3Si2O14 (CTGS) as well as on thermally oxidized Si (SiO2/Si) reference substrates. The Ti–Al films were characterized regarding their suitability as an alternative metallization for electrodes in HT surface acoustic wave devices. These films provide the advantage of significantly lower costs and in addition also a significantly lower density as compared to Pt, which allows a greater flexibility in device design. To realize a thermal stability of the films, AlNO cover as well as barrier layers at the interface to the substrate were applied. The samples were annealed for 10 h at up to 800 °C in high vacuum (HV) and at 600 °C in air and analyzed regarding the γ-TiAl phase formation, film morphology, and possible degradation. The Ti/Al films were prepared either by magnetron sputtering or by e-beam evaporation and the different behavior arising from the different deposition method was analyzed and discussed. For the evaporated Ti/Al films, AlNO barriers with a lower O content were used to evaluate the influence of the composition of the AlNO on the HT stability. The sputter-deposited Ti/Al films showed an improved γ-TiAl phase formation and HT stability (on SiO2/Si up to 800 °C in HV and 600 °C in air, on CTGS with a slight oxidation after annealing at 800 °C in HV) as compared to the evaporated samples, which were only stable up to 600 °C in HV and in air.
topic TiAl multilayers
CTGS
Thin films
High-temperature SAW device
url http://www.sciencedirect.com/science/article/pii/S2238785421003501
work_keys_str_mv AT mariettaseifert studyoftialthinfilmsonpiezoelectricctgssubstratesasanalternativemetallizationsystemforhightemperaturesawdevices
AT ericlattner studyoftialthinfilmsonpiezoelectricctgssubstratesasanalternativemetallizationsystemforhightemperaturesawdevices
AT siegfriedbmenzel studyoftialthinfilmsonpiezoelectricctgssubstratesasanalternativemetallizationsystemforhightemperaturesawdevices
AT steffenoswald studyoftialthinfilmsonpiezoelectricctgssubstratesasanalternativemetallizationsystemforhightemperaturesawdevices
AT thomasgemming studyoftialthinfilmsonpiezoelectricctgssubstratesasanalternativemetallizationsystemforhightemperaturesawdevices
_version_ 1721428845383385088