Enhanced Hole Injection Into Single Layer WSe<sub>2</sub>
Electronic devices with light-emitting regions composed of single layer transition metal dichalcogenides, such as tungsten diselenide (WSe<sub>2</sub>), are of great interest due to the formation of a direct bandgap at the single layer limit. Furthermore, increasing injected hole current...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8283562/ |