Polarization-insensitive GaN metalenses at visible wavelengths
Abstract The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required...
Main Authors: | , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2021-07-01
|
Series: | Scientific Reports |
Online Access: | https://doi.org/10.1038/s41598-021-94176-7 |