Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots

Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots

In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and...

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Bibliographic Details
Main Authors: Marius Eich, Riccardo Pisoni, Hiske Overweg, Annika Kurzmann, Yongjin Lee, Peter Rickhaus, Thomas Ihn, Klaus Ensslin, František Herman, Manfred Sigrist, Kenji Watanabe, Takashi Taniguchi
Format: Article
Language:English
Published: American Physical Society 2018-07-01
Series:Physical Review X
Online Access:http://doi.org/10.1103/PhysRevX.8.031023

Internet

http://doi.org/10.1103/PhysRevX.8.031023

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