Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study

Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study

A novel Si/SiC heterojunction Lateral Double-diffused Metal Oxide Semiconductor with the Semi-Insulating Polycrystalline Silicon field plate (SIPOS Si/SiC LDMOS) is proposed in this paper for the first time. The innovative terminal technology of Breakdown Point Transfer (BPT) had been applied on Si/...

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Bibliographic Details
Main Authors: Baoxing Duan, Shaoxuan Xue, Xin Huang, Yintang Yang
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Si/SiC heterojunction
SIPOS
breakdown point transfer
breakdown voltage
specific on-resistance
figure-of-merit
Online Access:https://ieeexplore.ieee.org/document/9276452/

Internet

https://ieeexplore.ieee.org/document/9276452/

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