Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of second...

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Bibliographic Details
Main Authors: Ann-Kathrin Kleinschmidt, Lars Barzen, Johannes Strassner, Christoph Doering, Henning Fouckhardt, Wolfgang Bock, Michael Wahl, Michael Kopnarski
Format: Article
Language:English
Published: Beilstein-Institut 2016-11-01
Series:Beilstein Journal of Nanotechnology
Subjects:
broad area semiconductor lasers (BAL)
dry-etch monitoring (RIE)
precise etch depth control
reflectance anisotropy spectroscopy (RAS)
III–V semiconductors
Online Access:https://doi.org/10.3762/bjnano.7.171

Internet

https://doi.org/10.3762/bjnano.7.171

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