Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
In this study, we report on the deposition of a highly crystalline AlN interfacial layer on GaN at 330 °C via plasma-enhanced atomic layer deposition (PEALD). Trimethylaluminum (TMA) and NH<sub>3</sub> plasma were used as the Al and N precursors, respectively. The crystallinity and mass...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-04-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/11/4/405 |