Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

In this study, we report on the deposition of a highly crystalline AlN interfacial layer on GaN at 330 °C via plasma-enhanced atomic layer deposition (PEALD). Trimethylaluminum (TMA) and NH<sub>3</sub> plasma were used as the Al and N precursors, respectively. The crystallinity and mass...

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Bibliographic Details
Main Authors:	Il-Hwan Hwang, Myoung-Jin Kang, Ho-Young Cha, Kwang-Seok Seo
Format:	Article
Language:	English
Published:	MDPI AG 2021-04-01
Series:	Crystals
Subjects:	GaN AlN AlHfON ALD interfacial layer MIS capacitor
Online Access:	https://www.mdpi.com/2073-4352/11/4/405

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