Estimation of power dissipation of a 4H-SiC Schottky barrier diode with a linearly graded doping profile in the drift region
The aim of this paper is to establish the importance of a linearly graded profile in the drift region of a 4H-SiC Schottky barrier diode (SBD). The power dissipation of the device is found to be considerably lower at any given current density as compared to its value obtained for a uniformly doped d...
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| Format: | Article |
| Language: | English |
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Maejo University
2009-09-01
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| Series: | Maejo International Journal of Science and Technology |
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| Online Access: | http://www.mijst.mju.ac.th/vol3/352-365.pdf |