INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented. The specific features of the functioning of various constructive solutions IGBT a...

Full description

Bibliographic Details
Main Authors: S. Ibrahim, I. Yu. Lovshenko, V. R. Stempitsky
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
isolated gate bipolar transistor
structure
manufacturing technology
static and dynamic characteristics
Online Access:https://doklady.bsuir.by/jour/article/view/822

Internet

https://doklady.bsuir.by/jour/article/view/822

Similar Items