Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH

Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH

Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed alon...

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Bibliographic Details
Main Authors: Milče M. Smiljanić, Žarko Lazić, Branislav Radjenović, Marija Radmilović-Radjenović, Vesna Jović
Format: Article
Language:English
Published: MDPI AG 2019-01-01
Series:Micromachines
Subjects:
tetramethylammonium hydroxide (TMAH)
wet etching
silicon
3D simulation
level-set method
Online Access:https://www.mdpi.com/2072-666X/10/2/102

Internet

https://www.mdpi.com/2072-666X/10/2/102

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