Analog circuits using FinFETs: benefits in speed-accuracy-power trade-off and simulation of parasitic effects
Multi-gate FET, e.g. FinFET devices are the most promising contenders to replace bulk FETs in sub-45 nm CMOS technologies due to their improved sub threshold and short channel behavior, associated with low leakage currents. The introduction of novel gate stack materials (e.g. metal gate, high-k diel...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | deu |
| Published: |
Copernicus Publications
2007-06-01
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| Series: | Advances in Radio Science |
| Online Access: | http://www.adv-radio-sci.net/5/285/2007/ars-5-285-2007.pdf |