Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications
This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and insid...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2017-02-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1996-1073/10/2/233 |