Analysis of Anti-JFET for 600V VDMOS and HCI Reliability
In VDMOS device the anti-JFET concentration has important role for determining the breakdown voltage and on-resistance of the device. Because higher N-drift doping concentration can provide the very best on-resistance of the device but also decrease breakdown voltage. It also has a proportional rela...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2018-01-01
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| Series: | MATEC Web of Conferences |
| Online Access: | https://doi.org/10.1051/matecconf/201820105001 |