Atomic-Scale Characterization of Slip Deformation and Nanometric Machinability of Single-Crystal 6H-SiC

Atomic-Scale Characterization of Slip Deformation and Nanometric Machinability of Single-Crystal 6H-SiC

Abstract As an important third-generation semiconductor material, the micro-deformation and removal mechanism of 6H-SiC at the atomic scale are vital for obtaining ultra-smooth and damage-free surface with atomic steps. Due to the difficulties in directly observing the surface/subsurface of nanomach...

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Bibliographic Details
Main Authors: Binbin Meng, Dandan Yuan, Shaolin Xu
Format: Article
Language:English
Published: SpringerOpen 2019-09-01
Series:Nanoscale Research Letters
Subjects:
6H-SiC
Anisotropy
Deformation
Machinability
Online Access:http://link.springer.com/article/10.1186/s11671-019-3123-7

Internet

http://link.springer.com/article/10.1186/s11671-019-3123-7

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