Atomic-Scale Characterization of Slip Deformation and Nanometric Machinability of Single-Crystal 6H-SiC

• Main Authors: Binbin Meng, Dandan Yuan, Shaolin Xu
• Format: Article
• Language: English
• Published: SpringerOpen 2019-09-01
• Series: Nanoscale Research Letters
• Subjects: 6H-SiC; Anisotropy; Deformation; Machinability
• Online Access: http://link.springer.com/article/10.1186/s11671-019-3123-7

Abstract As an important third-generation semiconductor material, the micro-deformation and removal mechanism of 6H-SiC at the atomic scale are vital for obtaining ultra-smooth and damage-free surface with atomic steps. Due to the difficulties in directly observing the surface/subsurface of nanomachining region by current experimental means, molecular dynamics method is used to study the atomic-scale details in nanomachining process, such as dislocation slip motion, phase transition, and material separation mechanism. The influence of crystallography-induced anisotropy on the slip deformation and nanometric machinability of 6H-SiC is emphatically investigated. This study contributes significantly to the understanding of micro-deformation and nanomachining process of 6H-SiC.