P-Channel and N-Channel Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Ultralow Power CMOS

P-Channel and N-Channel Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Ultralow Power CMOS

In this paper, n-channel and p-channel super-steep subthreshold slope (SS) PN-body tied (PNBT) silicon on insulator field-effect transistors (SOI-FETs) are demonstrated. The PNBT structure has a symmetrical source and drain structure. The devices show super-steep SS (< 1 mV/dec) character...

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Bibliographic Details
Main Authors: Takayuki Mori, Jiro Ida
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Body tied
feedback
floating body
SOI MOSFET
steep subthreshold slope
thyristor
Online Access:https://ieeexplore.ieee.org/document/8493139/

Internet

https://ieeexplore.ieee.org/document/8493139/

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