GaN and InGaN nanowires prepared by metal-assisted electroless etching: Experimental and theoretical studies

GaN and InGaN nanowires prepared by metal-assisted electroless etching: Experimental and theoretical studies

We investigate the optical and structural properties of GaN and InGaN nanowires (NWs) fabricated by metal-assisted electroless etching in a hydrofluoric acid (HF) solution. The emission spectra of GaN and InGaN NWs exhibit a red shift compared to the as-grown samples resulting from an increase in th...

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Bibliographic Details
Main Authors: S. Assa Aravindh, Bin Xin, Somak Mitra, Iman S. Roqan, Adel Najar
Format: Article
Language:English
Published: Elsevier 2020-12-01
Series:Results in Physics
Subjects:
GaN
InGaN
Nanowires
DFT
Electronic structure
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379720318945

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http://www.sciencedirect.com/science/article/pii/S2211379720318945

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