Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

The goal of this paper is to provide a comparative analysis of the thermal impact on the microwave performance of high electron-mobility transistors (HEMTs) based on GaAs and GaN technologies. To accomplish this challenging goal, the relative sensitivity of the microwave performance to changes in th...

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Bibliographic Details
Main Authors: Mohammad Abdul Alim, Abu Zahed Chowdhury, Shariful Islam, Christophe Gaquiere, Giovanni Crupi
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Electronics
Subjects:
GaAs
GaN
heterostructure
high electron-mobility transistor (HEMT)
microwave performance
temperature-sensitivity
Online Access:https://www.mdpi.com/2079-9292/10/9/1115

Internet

https://www.mdpi.com/2079-9292/10/9/1115

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