O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate

O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi...

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Bibliographic Details
Main Authors: Oumaima Abouzaid, Hussein Mehdi, Mickael Martin, Jérémy Moeyaert, Bassem Salem, Sylvain David, Abdelkader Souifi, Nicolas Chauvin, Jean-Michel Hartmann, Bouraoui Ilahi, Denis Morris, Ali Ahaitouf, Abdelaziz Ahaitouf, Thierry Baron
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Nanomaterials
Subjects:
Quantum Dots (QDs), semiconductor III-V
Metal Organic Chemical Vapor Deposition (MOCVD)
Online Access:https://www.mdpi.com/2079-4991/10/12/2450

Internet

https://www.mdpi.com/2079-4991/10/12/2450

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