O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate
The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi...
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doaj-0d1c69a1dd5d48aa8ef1b18711eef3d12020-12-08T00:05:04ZengMDPI AGNanomaterials2079-49912020-12-01102450245010.3390/nano10122450O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) SubstrateOumaima Abouzaid0Hussein Mehdi1Mickael Martin2Jérémy Moeyaert3Bassem Salem4Sylvain David5Abdelkader Souifi6Nicolas Chauvin7Jean-Michel Hartmann8Bouraoui Ilahi9Denis Morris10Ali Ahaitouf11Abdelaziz Ahaitouf12Thierry Baron13Univ. Grenoble Alpes, CNRS, CEA-Leti, Grenoble INP, LTM, F-38054 Grenoble, FranceUniv. Grenoble Alpes, CNRS, CEA-Leti, Grenoble INP, LTM, F-38054 Grenoble, FranceUniv. Grenoble Alpes, CNRS, CEA-Leti, Grenoble INP, LTM, F-38054 Grenoble, FranceUniv. Grenoble Alpes, CNRS, CEA-Leti, Grenoble INP, LTM, F-38054 Grenoble, FranceUniv. Grenoble Alpes, CNRS, CEA-Leti, Grenoble INP, LTM, F-38054 Grenoble, FranceUniv. Grenoble Alpes, CNRS, CEA-Leti, Grenoble INP, LTM, F-38054 Grenoble, FranceUniversité de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne, FranceUniversité de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne, FranceUniv. Grenoble Alpes, CEA-LETI, F-38054 Grenoble, FranceInstitut Quantique et Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, 3IT, Université de Sherbrooke, Sherbrooke, QC J1K 2R1 Québec, CanadaInstitut Quantique et Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, 3IT, Université de Sherbrooke, Sherbrooke, QC J1K 2R1 Québec, CanadaUniversité Sidi Mohammed Ben Abdellah, Faculty of Sciences and Technology, SIGER Laboratory, BP. 2202 Fès, MoroccoUniversité Sidi Mohammed Ben Abdellah, Faculté Polydisciplinaire Taza, LSI, B.P. 1223 Taza, MoroccoUniv. Grenoble Alpes, CNRS, CEA-Leti, Grenoble INP, LTM, F-38054 Grenoble, FranceThe epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates.https://www.mdpi.com/2079-4991/10/12/2450Quantum Dots (QDs), semiconductor III-VMetal Organic Chemical Vapor Deposition (MOCVD) |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Oumaima Abouzaid Hussein Mehdi Mickael Martin Jérémy Moeyaert Bassem Salem Sylvain David Abdelkader Souifi Nicolas Chauvin Jean-Michel Hartmann Bouraoui Ilahi Denis Morris Ali Ahaitouf Abdelaziz Ahaitouf Thierry Baron |
spellingShingle |
Oumaima Abouzaid Hussein Mehdi Mickael Martin Jérémy Moeyaert Bassem Salem Sylvain David Abdelkader Souifi Nicolas Chauvin Jean-Michel Hartmann Bouraoui Ilahi Denis Morris Ali Ahaitouf Abdelaziz Ahaitouf Thierry Baron O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate Nanomaterials Quantum Dots (QDs), semiconductor III-V Metal Organic Chemical Vapor Deposition (MOCVD) |
author_facet |
Oumaima Abouzaid Hussein Mehdi Mickael Martin Jérémy Moeyaert Bassem Salem Sylvain David Abdelkader Souifi Nicolas Chauvin Jean-Michel Hartmann Bouraoui Ilahi Denis Morris Ali Ahaitouf Abdelaziz Ahaitouf Thierry Baron |
author_sort |
Oumaima Abouzaid |
title |
O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate |
title_short |
O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate |
title_full |
O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate |
title_fullStr |
O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate |
title_full_unstemmed |
O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate |
title_sort |
o-band emitting inas quantum dots grown by mocvd on a 300 mm ge-buffered si (001) substrate |
publisher |
MDPI AG |
series |
Nanomaterials |
issn |
2079-4991 |
publishDate |
2020-12-01 |
description |
The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates. |
topic |
Quantum Dots (QDs), semiconductor III-V Metal Organic Chemical Vapor Deposition (MOCVD) |
url |
https://www.mdpi.com/2079-4991/10/12/2450 |
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