Double‐sided transistor device processability of carrierless ultrathin silicon wafers
Abstract Double‐sided metal‐oxide‐semiconductor field‐effect‐transistor processing is demonstrated for the first time on an ultrathin crystalline silicon substrate of 6‐20 μm in a 100 mm diameter wafer format without a carrier wafer, the thinnest free‐standing silicon wafers ever fabricated. The com...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2020-07-01
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| Series: | InfoMat |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/inf2.12087 |