Non-Linear Capacitance of Si SJ MOSFETs in Resonant Zero Voltage Switching Applications

The parasitic capacitances of modern Si SJ MOSFETs are characterized by their non-linearity. At high voltages the total stored energy Eoss(VDC) in the output capacitance Coss(v) differs substantially from the energy in an equivalent linear capacitor Coss(tr) storing the same amount of charge. That d...

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Bibliographic Details
Main Authors: Manuel Escudero, Matteo-Alessandro Kutschak, Nico Fontana, Noel Rodriguez, Diego Pedro Morales
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9129883/