Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime
The global variability of ultra-thin body and buried oxide (UTBB) MOSFETs in subthreshold and off regimes of operation is analyzed. The variability of the off-state drain current, subthreshold slope, drain-induced barrier lowering (DIBL), gate leakage current, threshold voltage and their correlation...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2014-07-01
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| Series: | Journal of Low Power Electronics and Applications |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2079-9268/4/3/201 |