The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

The behaviour of oxide and interface defects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors, firstly degraded by the gamma-irradiation and electric field and subsequently recovered and annealed, is presented. By analyzing the transfer chara...

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Bibliographic Details
Main Authors: Đorić-Veljković Snežana M., Manić Ivica Đ., Davidović Vojkan S., Danković Danijel M., Golubović Snežana M., Stojadinović Ninoslav D.
Format: Article
Language:English
Published: VINCA Institute of Nuclear Sciences 2013-01-01
Series:Nuclear Technology and Radiation Protection
Subjects:
VDMOSFET
gamma radiation
electrical stress
threshold voltage
gate oxide charge
interface traps
Online Access:http://www.doiserbia.nb.rs/img/doi/1451-3994/2013/1451-39941304406D.pdf

Internet

http://www.doiserbia.nb.rs/img/doi/1451-3994/2013/1451-39941304406D.pdf

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