Interface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET
Interface traps (ITs) and border traps (BTs) in Al2O3/GeOx/p-Ge gate stacks were characterized using deep-level transient spectroscopy. Through evaluating the gate stacks with different GeOx thicknesses, the respective BTs in Al2O3, the Al2O3/GeOx interface region, and GeOx were detected. The densit...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0002100 |