Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory
In this study, a bilayer HfO2/ZrO2 thin film structure was deposited by radio frequency sputtering at room temperature (RT) to investigate the resistive switching (RS) characteristics, mechanism as well as their reproducibility. Bilayer HfO2/ZrO2 structured device > 103 DC switching cycles at RT,...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2020-09-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379720317423 |