A CMOS Data Transfer System Based on Planar RF Coupling for Reinforced Galvanic Isolation with 25-kV Surge Voltage and 250-kV/µs CMTI

A CMOS Data Transfer System Based on Planar RF Coupling for Reinforced Galvanic Isolation with 25-kV Surge Voltage and 250-kV/µs CMTI

This paper exploits an effective approach to overcome the breakdown limitations of traditional galvanic isolators based on chip-scale isolation barriers, thus achieving a very high isolation rating (i.e., compliant with the reinforced isolation requirements). Such an approach is based on radio frequ...

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Bibliographic Details
Main Authors: Egidio Ragonese, Nunzio Spina, Alessandro Parisi, Giuseppe Palmisano
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Electronics
Subjects:
CMOS technology
galvanic isolation
integrated circuits
on-chip inductors
electromagnetic coupling
surge voltage
Online Access:https://www.mdpi.com/2079-9292/9/6/943

Internet

https://www.mdpi.com/2079-9292/9/6/943

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