Analysis of Optical Integration between Si<sub>3</sub>N<sub>4</sub> Waveguide and a Ge-Based Optical Modulator Using a Lateral Amorphous GeSi Taper at the Telecommunication Wavelength of 1.55 µm

Analysis of Optical Integration between Si<sub>3</sub>N<sub>4</sub> Waveguide and a Ge-Based Optical Modulator Using a Lateral Amorphous GeSi Taper at the Telecommunication Wavelength of 1.55 µm

We report on the theoretical investigation of using an amorphous Ge<sub>0.83</sub>Si<sub>0.17</sub> lateral taper to enable a low-loss small-footprint optical coupling between a Si<sub>3</sub>N<sub>4</sub> waveguide and a low-voltage Ge-based Franz&...

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Bibliographic Details
Main Authors: Worawat Traiwattanapong, Kazumi Wada, Papichaya Chaisakul
Format: Article
Language:English
Published: MDPI AG 2019-09-01
Series:Applied Sciences
Subjects:
germanium
silicon nitride
optical interconnect
Franz–Keldysh effect
Online Access:https://www.mdpi.com/2076-3417/9/18/3846

Internet

https://www.mdpi.com/2076-3417/9/18/3846

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