Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs
N-type InGaN/GaN multiple-quantum-wells (MQWs) were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD). The crystal quality and optical properties of samples after rapid thermal annealing (RTA) at different temperatures in a range from 400 to 800°C are investigated by X-...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2016-01-01
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| Series: | MATEC Web of Conferences |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1051/matecconf/20166706046 |