Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs
N-type InGaN/GaN multiple-quantum-wells (MQWs) were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD). The crystal quality and optical properties of samples after rapid thermal annealing (RTA) at different temperatures in a range from 400 to 800°C are investigated by X-...
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Online Access: | http://dx.doi.org/10.1051/matecconf/20166706046 |
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doaj-10b3a882f1304817b061683a6a2301c92021-02-02T00:49:09ZengEDP SciencesMATEC Web of Conferences2261-236X2016-01-01670604610.1051/matecconf/20166706046matecconf_smae2016_06046Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWsTian Yuan0Liang Limin1Xie Xinjian2Liu Hui3Hao Qiuyan4Liu Caichi5School of Materials Science and Engineering, Hebei University of TechnologySchool of Materials Science and Engineering, Hebei University of TechnologySchool of Materials Science and Engineering, Hebei University of TechnologySchool of Materials Science and Engineering, Hebei University of TechnologySchool of Materials Science and Engineering, Hebei University of TechnologySchool of Materials Science and Engineering, Hebei University of TechnologyN-type InGaN/GaN multiple-quantum-wells (MQWs) were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD). The crystal quality and optical properties of samples after rapid thermal annealing (RTA) at different temperatures in a range from 400 to 800°C are investigated by X-ray diffraction (XRD) and photoluminescence (PL) spectrum. The experimental results show that the peaks of InGaN, InN and In can be observed in all samples. And the results are induced by the phase separation and In-clusters. The luminescence peak of the samples annealed showed a red shift. It is caused by strain stress relaxation during the RTA process. Furthermore, some defects can be eliminated and the best annealing temperature is from 500°C to 700°C.http://dx.doi.org/10.1051/matecconf/20166706046InGaN/GaN MQWsRTAXRDPL spectrum |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Tian Yuan Liang Limin Xie Xinjian Liu Hui Hao Qiuyan Liu Caichi |
spellingShingle |
Tian Yuan Liang Limin Xie Xinjian Liu Hui Hao Qiuyan Liu Caichi Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs MATEC Web of Conferences InGaN/GaN MQWs RTA XRD PL spectrum |
author_facet |
Tian Yuan Liang Limin Xie Xinjian Liu Hui Hao Qiuyan Liu Caichi |
author_sort |
Tian Yuan |
title |
Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs |
title_short |
Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs |
title_full |
Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs |
title_fullStr |
Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs |
title_full_unstemmed |
Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs |
title_sort |
influence of rapid thermal annealing on the characteristics of ingan/gan mqws |
publisher |
EDP Sciences |
series |
MATEC Web of Conferences |
issn |
2261-236X |
publishDate |
2016-01-01 |
description |
N-type InGaN/GaN multiple-quantum-wells (MQWs) were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD). The crystal quality and optical properties of samples after rapid thermal annealing (RTA) at different temperatures in a range from 400 to 800°C are investigated by X-ray diffraction (XRD) and photoluminescence (PL) spectrum. The experimental results show that the peaks of InGaN, InN and In can be observed in all samples. And the results are induced by the phase separation and In-clusters. The luminescence peak of the samples annealed showed a red shift. It is caused by strain stress relaxation during the RTA process. Furthermore, some defects can be eliminated and the best annealing temperature is from 500°C to 700°C. |
topic |
InGaN/GaN MQWs RTA XRD PL spectrum |
url |
http://dx.doi.org/10.1051/matecconf/20166706046 |
work_keys_str_mv |
AT tianyuan influenceofrapidthermalannealingonthecharacteristicsofinganganmqws AT lianglimin influenceofrapidthermalannealingonthecharacteristicsofinganganmqws AT xiexinjian influenceofrapidthermalannealingonthecharacteristicsofinganganmqws AT liuhui influenceofrapidthermalannealingonthecharacteristicsofinganganmqws AT haoqiuyan influenceofrapidthermalannealingonthecharacteristicsofinganganmqws AT liucaichi influenceofrapidthermalannealingonthecharacteristicsofinganganmqws |
_version_ |
1724312790936584192 |