Characterization of Al Incorporation into HfO<sub>2</sub> Dielectric by Atomic Layer Deposition
This study presents the characteristics of HfAlO films for a series of Al incorporation ratios into a HfO<sub>2</sub> dielectric by atomic layer deposition on a Si substrate. A small amount of Al doping into the HfO<sub>2</sub> film can stabilize the tetragonal phase of the H...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-05-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/10/6/361 |