Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes

Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes

Abstract Based on time-resolved electroluminescence (TREL) measurement, more efficient carrier injection, transport, relaxation, and recombination associated with a stronger carrier localization and a low polarization effect in a nonpolar m-plane InGaN/GaN light emitting diode (m-LED), compared with...

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Bibliographic Details
Main Authors: Fann-Wei Yang, Yu-Siang You, Shih-Wei Feng
Format: Article
Language:English
Published: SpringerOpen 2017-04-01
Series:Nanoscale Research Letters
Subjects:
Time-resolved electroluminescence (TREL)
Carrier transport
Polarization effect
Nonpolar m-plane InGaN/GaN LED
Online Access:http://link.springer.com/article/10.1186/s11671-017-2087-8

Internet

http://link.springer.com/article/10.1186/s11671-017-2087-8

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