Hydrogenated n-Channel Low Temperature Polycrystalline Silicon TFTs as Ultraviolet Dosimeters
N-channel thin film transistors (TFTs) fabricated with hydrogenated low temperature polycrystalline silicon (LTPS) were exposed to ultraviolet (UV) radiation to a cumulative dose up to 16 J/cm<sup>2</sup>. The effect of radiation on the electrical characteristics of the devices was monit...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9444331/ |