Influence of Active Channel Layer Thickness on SnO<sub>2</sub> Thin-Film Transistor Performance

Influence of Active Channel Layer Thickness on SnO<sub>2</sub> Thin-Film Transistor Performance

Sol-gel processed SnO<sub>2</sub> thin-film transistors (TFTs) were fabricated on SiO<sub>2</sub>/p<sub>+</sub> Si substrates. The SnO<sub>2</sub> active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced...

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Bibliographic Details
Main Authors: Do Won Kim, Hyeon Joong Kim, Changmin Lee, Kyoungdu Kim, Jin-Hyuk Bae, In-Man Kang, Jaewon Jang
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Electronics
Subjects:
sol-gel
thickness
precursor concentration
SnO<sub>2</sub>
thin-film transistor
Online Access:https://www.mdpi.com/2079-9292/10/2/200

Internet

https://www.mdpi.com/2079-9292/10/2/200

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