Influence of Active Channel Layer Thickness on SnO<sub>2</sub> Thin-Film Transistor Performance
Sol-gel processed SnO<sub>2</sub> thin-film transistors (TFTs) were fabricated on SiO<sub>2</sub>/p<sub>+</sub> Si substrates. The SnO<sub>2</sub> active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-01-01
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Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/10/2/200 |