A Photolithography Process Design for 5 nm Logic Process Flow

A Photolithography Process Design for 5 nm Logic Process Flow

With the introduction of EUV lithography, the photolithographic process in 5 nm logic process can be simplified to use mostly single exposure method. In a typical 5 nm logic process, the contact-poly pitch (CPP) is 44-50 nm, the minimum metal pitch (MPP) is around 30-32 nm. And the overlay budget is...

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Bibliographic Details
Main Authors: Qiang Wu, Yanli Li, Yushu Yang, Yuhang Zhao
Format: Article
Language:English
Published: JommPublish 2019-12-01
Series:Journal of Microelectronic Manufacturing
Subjects:
5 nm logic process
euv
sadp
self-aligned lele
rcwa
stochastics
mask 3d scattering
Online Access:http://www.jommpublish.org/p/41/#

Internet

http://www.jommpublish.org/p/41/#

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