Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3

Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3

Layered van der Waals compounds offer opportunities to visit new physical phenomena in two dimensional materials. Here the authors report large tunneling magnetoresistance through exfoliated CrI3 crystals and attribute its evolution to the multiple transitions to different magnetic states.

Bibliographic Details
Main Authors: Zhe Wang, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Martin Kroner, Marco Gibertini, Takashi Taniguchi, Kenji Watanabe, Ataç Imamoğlu, Enrico Giannini, Alberto F. Morpurgo
Format: Article
Language:English
Published: Nature Publishing Group 2018-06-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-018-04953-8

Internet

https://doi.org/10.1038/s41467-018-04953-8

Similar Items