Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?
Current status and challenges of aggressive equivalent-oxide-thickness (EOT) scaling of high-κ gate dielectrics via higher-κ ( > 20) materials and interfacial layer (IL) scavenging techniques are reviewed. La-based higher-κ materials show aggressive EOT scaling (0.5–0.8 nm), but with effectiv...
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| Format: | Article |
| Language: | English |
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MDPI AG
2012-03-01
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| Series: | Materials |
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| Online Access: | http://www.mdpi.com/1996-1944/5/3/478/ |